FORMATION METHOD OF DIELECTRIC FILM IN CAPACITOR OF SEMICONDUCTOR

摘要

A forming method of dielectric layers having ONO(oxide-nitride-oxide) structure is disclosed. The method comprises the steps of: depositing a poly or amorphous silicon film(4) on a storage electrode(2) having native oxide(3); depositing silicon nitride layer(5) on the poly or amorphous silicon film(4) by in-situ without exposing in atmosphere; and forming oxide layer(6) on the silicon nitride layer(5), thereby forming ONO dielectric layers. Thereby, it is possible to improve uniformity of dielectric layer and dielectric capacitance by depositing the poly or amorphous silicon layer(4) between the native oxide(3) and the silicon nitride layer(5).