发明名称 FABRICATION METHOD OF SEMICONDUCTOR
摘要 A method for manufacturing a semiconductor device uses a stepper of a low resolution, uses the first and second light-exposure masks, performs a double light-exposure to make a proper energy light be partially overlapped, and easily forms a fine pattern below the stepper's resolution. The method includes the steps of: using a first light-exposure mask having a line/space pattern, and performing a primary light-exposure with an insufficient energy to pattern the photoresist liquid; performing a secondary overlay light-exposure with a sufficient energy to pattern the photoresist liquid on the primary light-exposure photoresist liquid, by using a second light-exposure mask having a line/space pattern; and forming a photoresist film pattern for a ling-space patterning by developing the photoresist liquid.
申请公布号 KR970010568(B1) 申请公布日期 1997.06.28
申请号 KR19930021156 申请日期 1993.10.13
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 BAE, SANG-MAN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址