| 摘要 |
The invention relates to means for converting the energy of light radiation into electrical energy and increases the short-circuiting current by creating conditions in which additional charge carrier generation takes place as a result of shock ionisation. The converter comprises electrodes (4, 5), first and second extremely photosensitive semiconductor layers (1, 3) of opposite conductivities and in contact with the electrodes, and a semiconductor intermediate transport element (2) between the electrodes (4, 5) and semiconductor layers (1, 3). The following conditions must be satisfied: Eg2 < Eg3, Eg1 < Eg3, alpha 2d2 < 0.1, l2 > d2, as must one of the following: Ec1 - Ec2 >/= 0, Ev1 - Ev2 >/= 0, the first of which applies if the layer (1) has p-type conductivity and the layer (3) has n-type conductivity, while the second applies where the respective conductivities are reversed. In the expressions shown, Eg1, Eg3, Eg2 are the widths of the prohibited zones of layers (1 and 3) and the intermediate element layer (2) respectively, Ec1 and Ec2 are the electron energies at the bottom of the conductivity zone of layer (1) and of the intermediate element layer (2), Ev1 and Ev2 are the hole energies at the ceiling of the valence zone of those layers, alpha 2 and d2 are respectively the light absorption coefficient of the material of the intermediate element layer (2) and the thickness of that layer, and l2 is the free path length of carriers in said layer. |
