| 摘要 |
<p>A method for manufacturing a semiconductor device containing two or more metallic wiring layers comprises: the step (a) of forming a first metallic wiring layer (10) having a first conductive layer (12) made mainly of at least aluminum and a second conductive layer (14) containing a metal having a melting point higher than that of the layer (12); the step (b) of forming an interlayer insulating layer (20) having a through hole by forming an insulating layer exhibiting electrical insulation on the first metallic wiring layer (10) and a resist layer of a prescribed pattern on the insulating layer, and patterning the insulating layer in such a way that at least part of the second conductive layer (14) is left by etching the insulating layer, using the resist layer as a mask; the step (c) of removing the resist layer; and the step (d) of forming a second metallic wiring layer (50) including a first conductive layer (52) made mainly of at least aluminum on the interlayer insulating layer (20) and electrically connecting the first and second wiring layers (12 and 50) to each other by forming a conductive section in the through hole. In this method, the reaction of the aluminum contained in the first conductive layer (12) with the etching gas and the resist components is prevented and no reaction product that hinders the patterning of the second metallic wiring layer (50) is formed, because the resist layer is removed while the second conductive layer (14) is left. Therefore, defects such as short-circuit and disconnection in the second metallic wiring layer (50) is prevented reliably.</p> |
