Super self-aligned bipolar transistor with heterojunction

摘要

The transistor includes a semiconductor substrate, e.g. of silicon, with a buried collector and having an oxide film with a conductive, thin-film base electrode formed on the substrate one after another. The substrate is provided with a heterojunction of e.g. Si or SiGe Ge. The collector is surrounded by the conductive thin film and is formed in transistor active region, bounded by patterns of the conductive thin and first oxide films on the buried collector on both sides of the conductive thin film is formed a first spacing layer. A multilayer base is formed in the active region, while an emitter is grown selectively on the base in an emitter region, bounded by etching of a second oxide film, on whose both sides is formed a second spacing layer. The emitter carries an electrode, while a passivating insulation layer is formed on the structure surface. Metal coupling lines are formed on the base, emitter, and buried collector and go back through the insulation passivation layer and/or the two oxide layers.