| 摘要 |
<p>FET mixers requiring relatively low local oscillator power levels and having excellent isolation of the local oscillator signal relative to the radio and intermediate frequency signals. The mixer comprises a first and a second FET transistor (Q1, Q2) having their gates and sources connected together such that the first and second FET transistors are in series; a local oscillator input circuit (48); a coupling network (72) comprising a transmission line balun (T1A, T1B); a diplexer circuit (23) and a bias circuit (45).</p> |
