| 摘要 |
<p>The semiconductor device comprises a low-conductivity or insulating layer (5) on one surface of which is formed a conducting section (6) while the other face is provided with a hole- or electron-type semiconductor layer (1) with an ohmic contact. A semiconductor or metal layer (2) is provided on the surface of the semiconductor layer and with (1) forms a p-n junction or Schottky barrier with another ohmic contact. The choice of the alloy cross-section and thickness of the layer (1) is restricted by the condition that said layer or part of it must be fully depleted by the basic charge carriers until breakdown of the p-n junction and/or the Schottky barrier when the latter is subjected to an external bias determined by the inequality shown in the application. The p-n junction and/or Schottky barrier can be formed with a non-homogeneous dopant section along a selected X direction on the surface of the layer (1). Along another direction Z on the surface of the semiconductor layer (1) are formed conducting strips (3) which with (1) form a non-rectifying contact and are either connected to the ohmic contact with (1) or at a distance from said ohmic contact. The strips (3) are either connected to the conducting sections (4) on the free surface of the layer (5), or the layer (5) is formed across the top of the strips.</p> |
