发明名称 Semiconductor diode circuit arrangement as wrong-polarity protection stage for electronic circuits e.g. for vehicle airbag system
摘要 The circuit (1) has a MOSFET (T2) for the polarity protection stage, its drain coupled to the positive input (2) of the circuit, its source coupled to the positive output of the circuit and its gate connected to earth. The circuit may have a pair of transistors (T1,T3) providing a comparator, the emitter of one coupled to the drain of the MOSFET and the emitter of the other coupled to the MOSFET source, their collectors coupled to earth via respective resistors (R1,R2).
申请公布号 DE19609219(A1) 申请公布日期 1997.06.26
申请号 DE19961009219 申请日期 1996.03.09
申请人 ROBERT BOSCH GMBH, 70469 STUTTGART, DE;MORTON INTERNATIONAL, INC., CHICAGO, ILL., US 发明人 MATTES, BERNHARD, 74343 SACHSENHEIM, DE;HENNE, RALF, 74343 SACHSENHEIM, DE;SAEUFFERER, BERND, 73278 SCHLIERBACH, DE
分类号 B60R21/01;H02H11/00;(IPC1-7):H02H3/18;B60R21/16;B60R21/32 主分类号 B60R21/01
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