| 摘要 |
A method and charge composition for obtaining Hg 1-x Cd x Te (x 0.2) single crystals and wafers with predetermined properties includes heating a vessel with a charge consisting of high-purity Cd, Hg and Te, and optionally containing indium, in a two-zone furnace in the temperature field 704-715{C; holding it for homogenisation and passing through an axial temperature gradient not exceeding 3{C/cm at a speed of 70-85 m/hour for the purpose of crystallisation. A charge for growing single crystals of A II B VI semiconductive compounds, specifically cadmium telluride, additionally includes in its composition together with cadmium and tellurium one or two elements from the group of sulphur, selenium and zinc. A method of preparing wafers of complex semiconductive materials includes polishing and washing of a group of wafers simultaneously on both sides without adhesive attachment of the wafers. Treatment is carried out in four stages: three polishing stages and one washing stage, in a special device which includes a lower driving polisher (2), an upper polisher (1) offset relative to the lower and freely rotatable, and a separator (3) disposed between them, in the aperture of which the wafers (9) are placed. Treatment of wafers of bulk single crystals, epitaxial structures and complex multi-layer heterostructures of arbitrary shape. As a result of the treatment, wafers have a mirror surface without a mechanically disturbed layer. Methods of fabricating Hg 1-x Cd x Te photosensors are also disclosed. |
