| 摘要 |
PURPOSE:To regulate patternwise exposure to only once at the time of forming a mask to eliminate registering error and to enable a fine pattern to be stably transferred in high precision by forming on a phase shift layer a light shielding film smaller in width than the layer. CONSTITUTION:This photomask is formed by successively laminating on the whole surface of a transparent substrate 1 the phase shift layer 3 and the light shielding film 2 smaller in width than the layer 3 and a resist 4, then, exposing it to light passed through a prescribed pattern, followed by developing it to form a resist pattern, using its pattern as a mask, successively etching the film 2, and the layer 3, performing side etching the layer 3, and removing the resist 4. It is preferred to form the film 2 in the prescribed region of the sub strate 1 and to form the layer 3 between the film 2 and thus to form the mask. |
