| 摘要 |
A diffused channel insulated gate field effect transistor, comprising: a gate isolation layer (14) and a gate electrode (16) positioned on an upper surface of a semiconductor substrate (10, 12) of a first conductivity type; a body region (24) of a second conductivity type present in the semiconductor substrate lying below a part of the gate electrode, on at least one side thereof, and extending downwards to a first depth; a source region (30) of said first conductivity type present in the body region, spaced away from the first end of the gate electrode, at the upper surface and extending downwards therefrom to a second depth, shallower than the first depth; and a lightly doped region (26) of the first conductivity type present in the body region, at least partly between the source region and the gate electrode, extending downwards to a substantially shallower depth than the second depth. <IMAGE> |
