发明名称 |
Method of N-type doping a compound semiconductor layer |
摘要 |
<p>A method of doping a compound semiconductor layer n-type during epitaxial growth of the compound semiconductor layer includes supplying source materials including respective elements of a compound semiconductor material to a heated monocrystalline substrate, epitaxially growing a layer of the compound semiconductor material on the heated substrate and, simultaneously, supplying SiI4 as a dopant source material including silicon to the heated substrate, incorporating silicon as a dopant impurity producing n-type conductivity into the compound semiconductor layer during the epitaxial growth. <IMAGE></p> |
申请公布号 |
EP0780887(A1) |
申请公布日期 |
1997.06.25 |
申请号 |
EP19960118716 |
申请日期 |
1996.11.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
IZUMI, SHIGEKAZU;UNEME, YUTAKA |
分类号 |
H01L21/223;H01L21/20;H01L21/203;H01L21/205;H01L29/80;H01L33/30;H01S5/00;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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