| 摘要 |
A MOS-technology power device integrated structure comprises a plurality of first elongated doped semiconductor stripes (11) of a first conductivity type formed in a semiconductor layer (9) of a second conductivity type, each of the elongated stripes (11) including a source region (15) of the first conductivity type, an annular doped semiconductor region (8) of the first conductivity type formed in the semiconductor layer (9) and surrounding and merged with the elongated stripes (11), a plurality of first insulated gate stripes (16) each one extending over the semiconductor layer (9) between two respective adjacent elongated stripes (11), the first insulated gate stripes (16) extending from an insulated gate ring (104) surrounding and merged with said plurality of first insulated gate stripes (16), a plurality of conductive gate fingers (4) each one extending over and electrically connected to a respective first insulated gate stripe (16), and a plurality of source metal fingers (7), each one extending from a common source bonding pad (5) over a respective elongated stripe (11) and contacting the elongated stripe (11) and the respective source region (15), so that the source metal fingers (7) and the conductive gate fingers (4) are interdigitate. At least one second insulated gate stripe (101) extending orthogonally to the first insulated gate stripes (16) between two opposite sides of the insulated gate ring (104) under the common source bonding pad (5). <IMAGE> |
