Quantum wire device and method of making such a device

摘要

A quantum wire device is provided having raised portions (43,44) formed on opposing walls (20,22) of a groove, thereby defining a region of reduced width in the vicinity of the intersection of the walls. During fabrication, a "V" groove is formed in a substrate and then further masking and etching steps are performed on the walls (20,22) of the groove to form the raised portions. Quantum wire devices can be formed within the groove by epitaxial deposition of semiconducting layers into the region of reduced width. The device can be a quantum wire photodetecter or a quantum wire semiconductor laserdiode.