| 摘要 |
<p>A monolithic semiconductor device having an edge structure, which comprises, on a substrate of a first type of doping, a control region (1) of a second type of doping, which is provided with an edge region (2), and a power region of a second type of doping, the particularity whereof resides in that in the edge region at least one channel (8, 9, 10, 11) is provided which is adapted to divide the edge region (2) into regions that are electrically isolated from each other (2, 2a, 2b; 2c, 2d), the region at the channel being covered with a field plate (6). A method for producing the edge structure in combination with the execution of the monolithic device is also disclosed herein. <IMAGE></p> |
