发明名称 Semiconductor device
摘要 A semiconductor device includes an increase voltage generation circuit generating an increased voltage having a higher potential than a high potential of a power-supply voltage externally supplied. In the device, an increased voltage stabilizing capacitor is connected between the increased voltage and the high potential of the power-supply voltage, and stabilizes the increased voltage.
申请公布号 US5641986(A) 申请公布日期 1997.06.24
申请号 US19960587965 申请日期 1996.01.17
申请人 FUJITSU LIMITED 发明人 UCHIDA, TOSHIYA
分类号 G06F1/26;G11C5/14;G11C11/401;G11C11/407;H01L21/822;H01L21/8242;H01L27/02;H01L27/04;H01L27/108;H02M3/07;(IPC1-7):H01L29/00 主分类号 G06F1/26
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