| 摘要 |
PROBLEM TO BE SOLVED: To enhance the optical characteristics of a light-emitting diode by a method wherein Mg is made to contain in a p-type AlGaAs active layer or the p-type AlGaAs active layer and a p-type AlGaAs clad layer as a p-type dopant. SOLUTION: An epitaxial layer, which consists of three layers of a p-type AlGaAs clad layer 7, a p-type AlGaAs active layer 6 and an n-type AlGaAs window layer 1, is formed on a p-type GaAs substrate 3 and an (n) side surface electrode 4 and a (p) side rear electrode 5 are respectively formed on the surface of this epitaxial layer and the rear of the substrate 3. Mg is doped to the layers 6 and 7 as a p-type dopant. Thereby, the p-n interface between the layers 6 and 7 can be improved and the good optical characteristics of a light-emitting diode can be obtained. |
