Method for fabricating conductive structures in integrated circuits

摘要

A method for fabricating conductive structures in integrated circuits. A conductive layer is formed over an underlying region in an integrated circuit. The conductive layer is then doped with impurities, and a thin amorphous silicon layer is formed over the conductive layer. A photoresist layer is then deposited and exposed to define a masking pattern. During exposure of the photoresist layer, the amorphous silicon layer acts as an anti-reflective layer. Portions of the photoresist layer are then removed to form a masking layer, and the insulating layer and amorphous silicon layer are then etched utilizing the masking layer to form conductive structures. During subsequent thermal processing, impurities from the conductive layer diffuse into the amorphous silicon layer causing the amorphous silicon layer to become conductive.