发明名称 Pressure contact type semiconductor device with axial bias and radial restraint between a distortion buffer plate and a semiconductor body
摘要 An alloy-free pressure contact type semiconductor device maintains a high reliability during transportation even without a pressure contact tool such as a simplified stack and therefore does not require a high transportation cost. Through holes (H1) and (H2) each having a circular cross section are formed in distortion buffer plates (21A) and (21K) at the center. A first and a second bottomed holes (i.e., recesses) (N1) and (N2) are formed in an anode electrode plate (41A) and a cathode electrode plate (41K). From the through hole (H1) up to the first bottomed hole (N1), a pressure contact pin (9) biased by a coil spring (8) is disposed. From the through hole (H2) down to the second bottomed hole (N2), a fixing pin (90) is disposed. Without applying external pressure upon the device, it is possible to prevent displacement of the first and the second distortion buffer plates due to vibration or impact during transportation and damage to a semiconductor body. Therefore, a transportation cost is low and the reliability of the device is high.
申请公布号 US5641976(A) 申请公布日期 1997.06.24
申请号 US19950388434 申请日期 1995.02.14
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAGUCHI, KAZUNORI;HIRASAWA, KYOUTARO;KONISHI, YUZURU
分类号 H01L21/52;H01L23/051;H01L23/48;H01L29/861;(IPC1-7):H01L23/42;H01L23/44 主分类号 H01L21/52
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