发明名称 PHOTORESIST COMPOSITION
摘要 <p>PROBLEM TO BE SOLVED: To provide a positive photoresist compsn. having excellent properties such as resolution, resistance against a delay effect and profile and having small dependence on post-exposure baking(PEB) and excellent sensitivity, film remaining rate and coating property. SOLUTION: A polyvinyl phenol resin in which phenol hydroxyl groups are partly protected is used as an alkali-soluble resin of this positive photoresist compsn. A sulfonate of an N-hydroxyimide compd. is used as an acid producing agent. Moreover, an amine compd. and an electron-donating material having <=1.7eV oxidation-reduction potential are compounded into the compsn. The obtd. compsn. has excellent resist properties such as resolution and profile and is hardly influenced by the period from exposure to PEB.</p>
申请公布号 JPH09166871(A) 申请公布日期 1997.06.24
申请号 JP19950327002 申请日期 1995.12.15
申请人 SUMITOMO CHEM CO LTD 发明人 YAKO YOSHIKO;TAKEYAMA TAKAMOTO;TAKAHASHI KENJI
分类号 G03F7/004;G03F7/023;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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