| 发明名称 |
Multilayered A1-alloy structure for metal conductors |
| 摘要 |
A Si IC includes an Al-based layer which is deposited as a composite of sublayers of different composition Al-based materials. In one embodiment a first sublayer comprises an Al-Si-based alloy disposed so as to prevent substantial Si migration into the first sublayer, and a second sublayer, above the first, comprises an Al-based alloy with substantially no Si to alleviate precipitation-induced problems.
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| 申请公布号 |
US5641994(A) |
申请公布日期 |
1997.06.24 |
| 申请号 |
US19960668310 |
申请日期 |
1996.06.26 |
| 申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
BOLLINGER, CHERYL ANNE;DEIN, EDWARD ALAN;MERCHANT, SAILESH MANSINH;NANDA, ARUN KUMAR;ROY, PRADIP KUMAR;WILKINS, JR., CLETUS WALTER |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/822;H01L23/482;H01L23/532;H01L27/04;(IPC1-7):H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
| 代理机构 |
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