发明名称 |
Method for formation of a self-aligned N-well for isolated field emission devices |
摘要 |
A method for use in manufacture of field emitter devices is provided specifically for forming electron emitter tips in a doped semiconductor substrate. The method comprises the following steps: forming a depression around an emitter area in the substrate; doping the substrate in the depression; and expanding the dopant in the depression into the emitter area.
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申请公布号 |
US5641706(A) |
申请公布日期 |
1997.06.24 |
申请号 |
US19960599440 |
申请日期 |
1996.01.18 |
申请人 |
MICRON DISPLAY TECHNOLOGY, INC. |
发明人 |
TJADEN, KEVIN;LEE, JOHN K. |
分类号 |
H01J9/02;(IPC1-7):H01L21/22 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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