| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal and a device therefor, capable of easily obtaining a high quailty single crystal by maintaining a large oxygen concentration controlling range in the single crystal in a device for lifting the single crystal by the Czochralski method. SOLUTION: This device for producing a single crystal is constituted by providing a rectifying cylinder 14 concentric circularly surrounding the single crystal lifted vertically upward from a raw material molten liquid M in a crucible 3, a cylindrical lift up chamber 2 for blocking a crystal growing part for lifting and growing the single crystal from the raw material molten liquid M from the outside air, and a means for introducing and flowing down an inert gas arranged at the top end of the lift up chamber 2. In this case, a means 16 for an inert gas introduction with gyration in a direction to a tangent line relative to the circumferences of the circles of the rectifying cylinder 14 and the lift up chamber 2 is provided at the circumference of the circle of the lifting up chamber 2. |
