发明名称 Method to deposit highly conformal CVD films
摘要 A method for chemical vapor deposition onto high aspect ratio features. Process gases including a reactant species are supplied to the surface and sufficient primary energy is supplied to the surface so as to cause the reactant species to deposit on the surface. Additional energy is supplied, preferably in the form of optical energy, that is tuned to be captured by the patterned features so as to slow the deposition rate preferentially on the patterned features.
申请公布号 US5641545(A) 申请公布日期 1997.06.24
申请号 US19950472323 申请日期 1995.06.07
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU, GURTEJ S.
分类号 C23C16/04;C23C16/48;C23C16/517;H01L21/768;(IPC1-7):C23C16/48 主分类号 C23C16/04
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