发明名称 |
Sintered aluminum nitride and circuit substrate using sintered aluminum nitride |
摘要 |
Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.
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申请公布号 |
US5641718(A) |
申请公布日期 |
1997.06.24 |
申请号 |
US19950521475 |
申请日期 |
1995.08.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HORIGUCHI, AKIHIRO;OH-ISHI, KATSUYOSHI;KASORI, MITSUO;SUMINO, HIROYASU;UENO, FUMIO;MONMA, JUN;KIMURA, KAZUO |
分类号 |
C04B35/581;C04B41/51;C04B41/88;H01L23/15;H05K1/03;(IPC1-7):C04B35/58;C04B35/03;B32B7/00 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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