发明名称 |
Plasma etching reactor with surface protection means against erosion of walls |
摘要 |
A thin flexible removeable shield made of electrically conducting material presses against the interior walls of an apertured processing chamber to protect the processing chamber walls from erosion from the reactive plasma gases. The shield and walls are electrically interconnected with a sleeve-like conductive insert overlapping a surface portion of the shield and passing through the shield and lining a chamber aperture, with the insert also insuring the positioning of the insert against the wall. The remaining exposed surface of the shield has a protective anodization. A conductive connector preferably also connects the insert to another interior chamber structure at the same electrical potential as the chamber walls.
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申请公布号 |
US5641375(A) |
申请公布日期 |
1997.06.24 |
申请号 |
US19940291369 |
申请日期 |
1994.08.15 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NITESCU, PETRU N.;NGUYEN, HOAN HAI |
分类号 |
H01L21/302;H01J37/32;H01L21/02;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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