发明名称 Process to apply photoresist printer to a wafer
摘要 An improved method for applying a primer to a wafer surface prior to coating the wafer with photoresist is provided. The method comprises priming a wafer with HMDS, removing the wafer from the priming chamber, and closing the chamber. Next, the chamber, piping and primer source are evacuated. The bubbler canister, piping and wafer chamber are held at a pressure of about 15 inches H2O while the priming tool is idle between wafer priming operations. By maintaining the vaporizer, piping and wafer chamber at a partial vacuum, the primer will be prevented from condensing and forming harmful droplets on the wafer surface. The invention prevents primer condensation from forming on the wafer, thus improving photolithographic yields and device yields.
申请公布号 US5641541(A) 申请公布日期 1997.06.24
申请号 US19950537101 申请日期 1995.09.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 CHEN, YUNG-TA
分类号 B05D7/24;H01L21/312;(IPC1-7):C23C16/00 主分类号 B05D7/24
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