| 摘要 |
The separation film of semiconductor element is formed as the following. (a) On the silicon substrate(1), form the thin oxide film(2) and the nitride film(3) in that order and then through the photo engraving process using the active mask, remove the nitride film(3) of field region and the oxide film(2) in order. After that, form the SiOxNy layer(4) by thermal processing it in NH3 atmosphere or injecting nitrogen ion on the exposed substrate. (b) On the front side of the resulting material, form the polycrystalline silicon film and form the polycrystalline silicon sidewall(5) on the sidewalls of nitride film(3) and the oxide film(2) through dry etching.
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