发明名称 METHOD OF GROWING DIAMOND FROM GRAPHITE
摘要 FIELD: artificial diamond. SUBSTANCE: diamond is grown from graphite in high-pressure chamber using pulse-periodical laser emission directed on diamond-graphite boundary through one of laser emission-transparent walls of chamber. In the diamond anvil-type chamber, pressure from about 5 to about 50 GPa is maintained (depending on chamber capacity), and laser emission pulse heats very narrow skin-layer of graphite to temperatures of order of 1000 K which is sufficient to convert graphite into diamond. Because of great temperature gradients in skin-layer and high heat conductivity of diamond, abnormally fast cooling of layer and its conversion into laser emission-transparent diamond occurs. Wavelength of laser emission should fall within diamond transparency region from about 0.2 to about 5 mcm. Next laser pulse heats next graphite layer and converts it into diamond. Thus laser emission stimulates proliferation of transparent diamond into non-transparent graphite. EFFECT: intensified process.
申请公布号 RU95109547(A) 申请公布日期 1997.06.20
申请号 RU19950109547 申请日期 1995.06.07
申请人 FIZICHESKIJ INSTITUT IM.P.N.LEBEDEVA RAN 发明人 MOLCHANOV A.G.;ROZANOV V.B.
分类号 B01J3/06;B01J19/12;C01B31/06;C30B29/04 主分类号 B01J3/06
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