发明名称 |
METHOD OF GROWING DIAMOND FROM GRAPHITE |
摘要 |
FIELD: artificial diamond. SUBSTANCE: diamond is grown from graphite in high-pressure chamber using pulse-periodical laser emission directed on diamond-graphite boundary through one of laser emission-transparent walls of chamber. In the diamond anvil-type chamber, pressure from about 5 to about 50 GPa is maintained (depending on chamber capacity), and laser emission pulse heats very narrow skin-layer of graphite to temperatures of order of 1000 K which is sufficient to convert graphite into diamond. Because of great temperature gradients in skin-layer and high heat conductivity of diamond, abnormally fast cooling of layer and its conversion into laser emission-transparent diamond occurs. Wavelength of laser emission should fall within diamond transparency region from about 0.2 to about 5 mcm. Next laser pulse heats next graphite layer and converts it into diamond. Thus laser emission stimulates proliferation of transparent diamond into non-transparent graphite. EFFECT: intensified process. |
申请公布号 |
RU95109547(A) |
申请公布日期 |
1997.06.20 |
申请号 |
RU19950109547 |
申请日期 |
1995.06.07 |
申请人 |
FIZICHESKIJ INSTITUT IM.P.N.LEBEDEVA RAN |
发明人 |
MOLCHANOV A.G.;ROZANOV V.B. |
分类号 |
B01J3/06;B01J19/12;C01B31/06;C30B29/04 |
主分类号 |
B01J3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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