| 摘要 |
PROBLEM TO BE SOLVED: To accurately mount a semiconductor element on a substrate with a high reliability by providing a penetration area containing at least one side of a polysilane part and a polysiloxane part and different in at least one characteristic of electric characteristic and magnetical characteristic. SOLUTION: Only the exposed part of a polysilane film 13 is selectively changed to a porous polysiloxane film 15 by executing exposure by UV rays by interposing a mask 14. In this case, the polysiloxane film 15 is formed on the polysilane film 13 in accordance with an electrode of the semiconductor element. After that, only the polysiloxane part 15 having a porous function is selectively plated by executing an electroplating of a solder being a conductive material by using a copper film 12 formed on a polyester film 11 as a plating electrode. As the result, the polysiloxane film 16 on which the solder is doped is formed at an exposed area in accordance with a size and a pitch of the electrode of the semiconductor. In this way, a desired characteristic is imparted to the polysilane film 13 with a fine pitch. |
