发明名称 PRODUCTION OF ACTIVE MATRIX DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method considering the patterning of a transparent conductive film in a terminal electrode part or a driver circuit part in the case of exposing the transparent conductive film from its rear by the use of a mask consisting of gate lines and data lines to pattern the film and form pixel electrodes in an active matrix liquid crystal display device having thin film transistors(TFTs). SOLUTION: A 1st resist layer 301 is exposed and developed by light irradiation from its upper part by the use of a mask 302 to obtain a 1st pattern 303. Before or after the formation of the 1st pattern 303, a 2nd resist layer 304 is exposed by light irradiation from its rear and developed to obtain a 2nd pattern 305, or it is also available to irradiate the layer 301 with light from its upper part by the use of the mask 302 after applying negative resist, and before, after, or simultaneously with the light irradiation, to irradiate the layer 302 with light from its rear and developing the resist layer to obtain the pattern 305.</p>
申请公布号 JPH09160068(A) 申请公布日期 1997.06.20
申请号 JP19950345629 申请日期 1995.12.09
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN;TAKEMURA YASUHIKO
分类号 G02F1/136;G02F1/1368;(IPC1-7):G02F1/136 主分类号 G02F1/136
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