发明名称 METHOD AND DEVICE FOR FILLING AND FLATTENING OF LOW FUEL CONSUMPTION METAL OF CONTACT, VIAHOLE AND TRENCH IN SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To fill up narrow high-aspect ratio apertures to form electric contacts, without forming voids in a final deposit by comprising an aperture lining composed of a carrier layer and sputter conductor to be reflowed to fill the apertures. SOLUTION: Prior to deposition of a conductor, a carrier layer 100 is formed on the walls of apertures 113 of a high aspect ratio exceeding 1:1, the flow or moving of a depositing material for filling the apertures 113 is raised to deposit a conductor esp. Al in the apertures 113 of a thin film layer or substrate. Thus, if using the carrier layer 100, contacts 118, vias, etc., can be formed by depositing an aperture filling material by the conventional sputtering techonology and flowing it into the apertures 113 having an aspect ratio over 1:1.
申请公布号 JPH09162293(A) 申请公布日期 1997.06.20
申请号 JP19960208636 申请日期 1996.08.07
申请人 APPLIED MATERIALS INC 发明人 ZEN SUU;JIYON FUOOSUTAA;TSUEEYAN YAU
分类号 C23C14/00;C23C14/04;C23C14/06;C23C14/32;C23C14/35;H01L21/203;H01L21/285;H01L21/3205;H01L21/768;H01L23/485;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/768 主分类号 C23C14/00
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