| 摘要 |
PROBLEM TO BE SOLVED: To form a resist film on a silicon wafer with satisfactory adhesion by polymerizing and curing a resist compsn. on the wafer. SOLUTION: A resist compsn. contg. methyl methacrylate, org. acids and a radical polymn. initiator is polymerized and cured on a silicon wafer to form the objective methacrylic resist film. The pref. amt. of the methyl methacrylate in the compsn. is 60-99.9 pts.wt., that of the org. acids is 0.001-30 pts.wt. and the amt. of the polymn. initiator is 0.5-5 pts.wt. The resist film has satisfactory adhesion to the wafer even in the case of a thick film, can form a fine pattern of a desired shape by lithography with X-rays, electron beams, etc., and is suitable for use in the formation of a micromachine or LSI. |
