| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain a surface emitting laser with low threshold current and high emission efficiency and with its oscillation wavelength in a specific band by epitaxially growing an n-type reflector, an MQW active layer wherein the well layer of the active layer is formed by compression strain and a p-type reflector on a GaAs substrate in this order. SOLUTION: The surface emitting semiconductor is formed by epitaxially growing a semiconductor multilayer film 3 as a first optical reflector wherein AlGaAs the film thickness of which is 1/4 of optical wavelength is alternately formed, an MQW active layer 8 of an AlGaAs/InGaAlAs layer or an InGaAsP layer the lattice constant of which is larger than that of GaAs wherein the well layer of the active layer is formed by compressive strain, and a p-type reflector 22 wherein AlGaAs the film thickness of which is 1/4 of optical wavelength is alternately formed, on a GaAs substrate 1 in this order, and its oscillation wavelength is within a 0.8-μm band. A compression strain layer is introduced into the active layer 8, as mentioned above, and the state density function is thereby reduced for increase in the optical gain of the electric field components parallel with the direction of superlattice.
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