发明名称 ELECTRICAL SIGNAL SUPPLY CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To stably operate a circuit by reducing the delay time difference of the signal from an electrical signal generation source being arranged at the edge of a plurality of circuit cells to each circuit cell. SOLUTION: In the electrical signal supply circuit, circuit cells C21-C26 are connected to nodes N211-N216 and the nodes N211-N212, the nodes N212-N213, the nodes N214-N215, and the nodes N215-N216 are connected via resistors R211, R212, R213, and R214. A node N217 is connected to a signal generation source SD via a resistor R221 and the nodes N212 and N215 are connected to the node N217 via the resistors R221 and R222, respectively. By wiring lines from the signal generation source SD to the circuit cells C21-C26 in a pyramid shape, the delay time difference to the circuit cells C21-C26 can be reduced.</p>
申请公布号 JPH09161487(A) 申请公布日期 1997.06.20
申请号 JP19960258135 申请日期 1996.09.30
申请人 MATSUSHITA ELECTRON CORP 发明人 HIRANO HIROSHIGE;NAKAKUMA TETSUJI
分类号 G11C11/413;G06F1/10;G11C11/22;G11C11/401;G11C11/404;G11C14/00;(IPC1-7):G11C14/00 主分类号 G11C11/413
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