| 摘要 |
PROBLEM TO BE SOLVED: To accelerate the mutual diffusion at the interface of pn junction by forming a first n-type semiconductor layer on a transparent conductive substrate, and forming the first chloric layer thereon and heat-treating it, and forming a second n-type layer on the first n-type layer, and forming a p-type layer thereon, and forming a chloric layer thereon, and then, heat-treating it. SOLUTION: An ITO film 2 is made on a glass board 1, and thereon an n-type CdS film 3 is made. That board 1 is dipped in methanol solution containing cadmium chloride so as to form a CdCl2 layer 41, and then it is heat-treated. A second CdS film 31 is made on the CdS film 3. Subsequently, a CDTe film 4 is made. Next, the board 4 where the CdS films 3 and 31 and the CdTe film 4 are stacked is dipped in methanol solution containing cadmium chloride, and then it is dried to form a CdCl2 layer 42. The mutual diffusion at the pn junction interface can be properly accelerated by the heat treatment process of the CdTe film 4, by forming a second CdS film 31 thinly on the n-type CdS film 3 processed once. |
