| 摘要 |
PROBLEM TO BE SOLVED: To reduce a circuit area in one-mask programmable gate array able to realize a purposed function system by only a final metal wiring process. SOLUTION: A base cell consisting of a region 9, in which a semiconductor element and a wiring element are in series arranged in a plurality of P-channel type MOS transistors and a region 10, in which a plurality of N-channel type MOS transistors are arranged in parallel there with are in series arranged, is formed. Then, a power supply wiring 11 or a ground wiring 12 to be provided inside this base cell is provided between a contact hole of a source electrode or a drain electrode on the side, where the P-channel type MOS transistor and the N-channel type MOS transistor are adjacent, of a diffusion layer of the P-channel type MOS transistor or the N-channel type MOS transistor. |
