| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor laser device for large output that is resistant to heat and highly reliable, and the electrode configuration of which remains stable for a long time by forming a p-type electrode from a three-layered electrode made of either of Cr/Pt/Au or Cr/Ni/Au. SOLUTION: A semiconductor laser device for large output is formed by forming an epitaxial layer 20 composed of a n-type clad layer 20a, an optical guide layer 20b, a luminous layer 20c, a p-type optical guide layer 20d and a clad layer 20e, an insulating layer 30 and a p-type electrode 40 on the surface of an n-type substrate 10, and forming a n-type electrode 50 and a solder layer 60 on the underside of the n-type substrate 10. Gold wires 70a, 70b for current injection are bonded to the p-type electrode 40 on both sides of a stripe 41. The p-type electrode 40 consists of a three-layered film of Cr/Pt/Au or Cr/Ni/Au, and the stripe 41 having a width L to be bonded directly to the epitaxial layer 20 for current injection is formed thereon.</p> |
