| 摘要 |
PROBLEM TO BE SOLVED: To get high photosensitiveness by specifying the thickness dGe of (a-SiGe:H (thickness dSiGe)/a-Ge:H(thickness dGe)) n (n>=2) of multilayer film structure where a-SiGe:H and a-Ge:H are stacked two layers or more alternately on a substrate. SOLUTION: An a-SiGe:H layer and a-Ge:H layer are grown, using Monosilane, monogermane, and diborane 1ppm in concentration diluted with hydrogen. The mixture ratio of monogermane and diborane 1ppm diluted with hydrogen at formation of the a-Ge:H layer is 5:1. After formation of each film, the formation process of a-SiGe:H layer/aGe:H layer/a-SiGe: H layer... is performed repeatedly to form a multilayer film. As the thickness of each layer, it is made by the combination of (dSiGe=1.5nm/dGe=0.3nm). If it is formed with the thickness of dGe 0.2-0.7nm, high sensitivity of eg=1.49, 1.45, and 1.42dV can be gotten as an optical gap. |
