| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor containing high characteristic by using metal element which promotes crystallization of silicon. SOLUTION: Areas of codes 101 and 102, and areas of codes 108-110 are doped with nickel element selectively in the surface of an amorphous silicon film 103. And, by performing heat treatment, growth (horizontal growth) parallel to a substrate as shown with codes 104-107 is performed. At this time, the areas 108-110 whose width are made into 5μm or below act as stopper areas, so that the lateral growth from the areas 101 and 102 stop. In such a way, the horizontal growth area is provided by controlling. And a circuit such as a shift resistor, etc., can be constituted by areas provided with the same crystal growth form. |
