MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device includes the steps of forming a polysilicon layer and refractory metal silicide layer on a lower structure formed on a semiconductor substrate, dry-etching the polysilicon layer and refractory metal silicide layer to form a polysilicon layer pattern and refractory silicide layer pattern, and performing heat treatment to remove by-products generated during the dry etching process.