PATTERNING METHOD OF PHOTORESIST FOR CHARGE STORAGE ELECTRODE IN THE SEMICONDUCTOR DEVICE

摘要

A fabrication method of photo-resist pattern for forming a storage pattern is provided to improve a resolution by reducing a proximity effect. The method comprises the steps of: coating a positive PR on a conductive layer(20); firstly exposing the positive PR using an exposing mask(10A) having line and space shaped Cr patterns(3A) arranged horizontal direction; secondly exposing the positive PR using an exposing mask(10B) having line and space shaped Cr patterns(3B) arranged vertical direction to expose a Cr patterns(4); and developing the positive PR in order to form fine PR patterns(2). Thereby, it is possible to increase the resolution and easily form fine patterns used a storage pattern.