VERFAHREN ZUR HERSTELLUNG SAUBERER,ORIENTIERTER CdTe OBERFLÄCHEN
摘要
Chemically-etched and or sputtered CdTe surfaces are exposed to UV excimer laser radiation at a fluence ranging from about 15 to 75 mJ/cm2, followed by either a low temperature (<300 DEG C.) thermal anneal or exposure of the CdTe surface to UV excimer laser radiation at a fluence lower than the threshold fluence. This procedure provides clean, stoichiometric, and well-ordered CdTe surfaces.
申请公布号
DE69219759(D1)
申请公布日期
1997.06.19
申请号
DE1992619759
申请日期
1992.11.06
申请人
HUGHES AIRCRAFT CO., LOS ANGELES, CALIF., US
发明人
ZINCK, JENNIFER J., AGOURA, CA 91301, US;BREWER, PETER D., NEWBURY PARK, CA 91320, US