| 摘要 |
<p>A semiconductor four layer device comprises an anode formed from an electrically conductive contact and a first layer of p-type semiconductor material. A first layer (3) of n-type semiconductor material is in contact with the first layer (2) of p-type material, and a second layer (4) of p-type semiconductive material is in contact with the first layer (3) of n-type material. A MOS gate (5) is formed across, and in contact with, the first layer (3) of n-type material and the second layer (4) of p-type material to turn the device on and off. A cathode (8) is formed from an electrically conductive contact and a second layer (7) of n-type semiconductor material in contact with the second layer (4) of p-type material, and an electrically conductive bipolar gate contact (6) is formed on the second layer of p-type material and arranged to switch the device between latched and unlatched states (equivalent to MCT and IGBT states) in the on-state. A complementary device is provided.</p> |
