| 摘要 |
A cryogenic solid-state semiconductor power device, (10) has the actual device chip (12) mounted on a substrate (11) of a material of very high thermal conductivity, which is positioned in a a bath of inorganic fluid. The substrate may be formed of beryllia, beryllium, alumina, aluminum nitride, diamond and the like materials. |
| 申请人 |
GENERAL ELECTRIC CO., SCHENECTADY, N.Y., US |
发明人 |
MUELLER, OTWARD MARIA, BALLSTON LAKE, NEW YORK 12019, US;SMITH, LOWELL SCOTT, SCHENECTADY, NEW YORK 12309, US |
