发明名称 Serial access memory set with two serial access memories
摘要 The set is formed by two serial access memories, a memory cell array and a read-out/write control (12) for the cell array. A first power control (14') generates a first control signal with different levels and applies it to the first series access memory according to a first write release signal from the read-out/write control. A second power control (16') generates a second control signal with different levels and applies it to the second serial access memory according to a second write release signal from the read-out/write control.
申请公布号 DE19652305(A1) 申请公布日期 1997.06.19
申请号 DE19961052305 申请日期 1996.12.16
申请人 LG SEMICON CO., LTD., CHEONGJU, KR 发明人 KIM, YOUNG HO, KWACHON, KR
分类号 G11C11/401;G11C7/10;G11C8/04;G11C11/407;(IPC1-7):G11C8/04 主分类号 G11C11/401
代理机构 代理人
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