发明名称 METHOD FOR PURGING A MULTI-LAYER SACRIFICIAL ETCHED SILICON SUBSTRATE
摘要 An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate through a variety of etching and bonding processes. The processes entail ion implantation and formation of an oxide support layer (40, 42, 44) below the proofmass, integrally bonding two complementary proofmass (62) and substrate structures together, and then removing the oxide support layer (40, 42, 44) to leave the proofmass (62) supported by the hinge (67) within the body of silicon material (12). In a bond and etch back process, the wafer (532) is processed, sawed in half, and then bonded together again wherein the complementary halves are joined to obtain the finished accelerometer. During fabrication of the composite wafer (900), the wafer (900) is mounted to a centrifuge (902), and spun to remove etchant. The centrifuge (902) is constructed from a bar shape platform (904) that is rotated by a motor (906). Two compartments (910) are lined with filter paper (912, 914, 916) that contain the composite wafers (900), and are covered by lid (918).
申请公布号 WO9722140(A2) 申请公布日期 1997.06.19
申请号 WO1996US18508 申请日期 1996.11.18
申请人 LITTON SYSTEMS, INC. 发明人 WARREN, KEITH, O.
分类号 G01P15/08;G01P15/125;H01L21/306;H01L49/00 主分类号 G01P15/08
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