There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of a compound which degrades into a deposit and a residue when a radiant beam (e.g. a laser beam) or a particle beam (e.g. an electron beam) is applied. The residue and any unreacted compound may be washed off the substrate to which it has been applied. Nanoscale dimensions of the deposit can be achieved. A particularly suitable organometallic compound is tetra-sec butyl diaurum difluoride.
申请公布号
DE69310763(D1)
申请公布日期
1997.06.19
申请号
DE1993610763
申请日期
1993.11.19
申请人
THE UNIVERSITY COURT OF THE UNIVERSITY OF DUNDEE, DUNDEE, SCOTLAND, GB