| 摘要 |
A technique is described that has a better process margin than a convetional cromium mask. The method for fabricating the phase mask includes the steps of forming a photo-resist pattern 8 by covering positive photo-resist on a cromium mask 6 and then developing it, forming a groove 10 by etching a silicon substrate 7 and then removing the photo-resist pattern 8, covering photo-resist on a entire structure and removing it by etching-back so that the photo-resist can remain only in the groove 10 and then annealing the remaining photo-resist to be hard, etching a cromium pattern 6 to a desired extent, and removing the remaining photo-resist. Thereby, it is possible to improve the process margin when a fine pattern is formed and thus increase the yield of a semiconductor device.
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