| 摘要 |
<p>A process for manufacturing an integrated circuit having both field effect and bipolar transistors provides, in one embodiment, a polycide film over the gate and field oxides on the surface of the semiconductor substrate. The process then patterns the polycide film such that a protective structure of gate material is formed on top of the base region of the bipolar transistor while the gate of the field effect transistor is formed, in a single process step. The channel region of the field effect transistor is defined by the gate, which also serves as a mask for etching away the gate oxide from the source and drain regions of the filed effect transistor. Ionic species are implanted to form the source and drain of the field effect transistor and the collector contact of the bipolar transistor. The protective structure of gate material in the active region of the bipolar transistor is removed just before the base region is implanted with ionic species to form the base of the bipolar transistor. A polysilicon or polycide film provides the emitter of the bipolar transistor. <IMAGE> <IMAGE></p> |
